2023, May 19Share this article
The research results have been recently published in a prestigious international journal Advanced Optical Materials
A group of physicists led by Prof. Viktor Brus (https://vvbrus.wixsite.com/brusgroup) in collaboration with a group led by Prof. Annie Ng and Dr. Marat Kaikanov proposed a novel high-performance and extreme radiation-resistant perovskite photodiode as part of their research project launched in January 2022 with a grant from Nazarbayev University.
The contribution unravels the impact of pulsed (150 ns) 170 keV proton irradiation with different accumulated fluences on high-performance multicomponent Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 perovskite photodiodes via a comprehensive study and comparison of all photodiode characteristics of the as-prepared and irradiated devices. The multi-component hybrid perovskite used in our study is a state-of-the-art perovskite photoactive material.
The results of the study showcased the exceptional durability of the perovskite photodiodes, which continued to exhibit superior efficiency and stability even after exposure to extremely high levels of radiation. The researchers also observed minimal degradation in the devices' parameters, indicating their potential for application in radiation-intensive environments.
The advanced radiation resistance of photodiodes was experimentally tested employing the NU pulse high-current ion accelerator i-NURA.
i-NURA generates so-called Intense Pulsed Ion Beam (IPIB). IPIBs are widely used for annealing of the near-surface layer of bulk materials. But i-NURA was adjusted for modification of nanomaterials, including investigation of radiation tolerance of modern thin-film photo-devices. It is worth to notice, that the pulsed power of the beam is more than 100 MW, while the total power consumption of i-NURA accelerator is just about 10 kW. Another important feature of i-NURA accelerator is the absence of any kind of radiation outside the vacuum chamber where the samples are placed.
The research results have been recently published in a prestigious international journal Advanced Optical Materials and highlighted on the journal’s cover image.
Scientists will continue working on improving their perovskite optoelectronics concept utilizing a series of different types of novel semiconductor materials and device structures for developing next-generation radiation-resistant optoelectronic and photovoltaic devices.
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